Description
The partially-depleted (PD) silicon Metal Semiconductor Field Effect Transistor (MESFET) is becoming more and more attractive for analog and RF applications due to its high breakdown voltage. Compared to conventional CMOS high voltage transistors, the silicon MESFET can be fabricated in commercial standard Silicon-on-Insulator (SOI) CMOS foundries without any change to the process.
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Contributors
- Chen, Bo (Author)
- Thornton, Trevor (Thesis advisor)
- Bakkaloglu, Bertan (Committee member)
- Goryll, Michael (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2013
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Note
- Partial requirement for: M.S., Arizona State University, 2013Note typethesis
- Field of study: Electrical engineering
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by Bo Chen