Description

The partially-depleted (PD) silicon Metal Semiconductor Field Effect Transistor (MESFET) is becoming more and more attractive for analog and RF applications due to its high breakdown voltage. Compared to conventional CMOS high voltage transistors, the silicon MESFET can be fabricated

The partially-depleted (PD) silicon Metal Semiconductor Field Effect Transistor (MESFET) is becoming more and more attractive for analog and RF applications due to its high breakdown voltage. Compared to conventional CMOS high voltage transistors, the silicon MESFET can be fabricated in commercial standard Silicon-on-Insulator (SOI) CMOS foundries without any change to the process.

Reuse Permissions
  • Downloads
    pdf (3.5 MB)

    Download count: 0

    Details

    Contributors
    Date Created
    2013
    Resource Type
  • Text
  • Collections this item is in
    Note
    • Partial requirement for: M.S., Arizona State University, 2013
      Note type
      thesis
    • Field of study: Electrical engineering

    Citation and reuse

    Statement of Responsibility

    by Bo Chen

    Machine-readable links