This work is focused on modeling the reliability concerns in GaN HEMT technology. The two main reliability concerns in GaN HEMTs are electromechanical coupling and current collapse. A theoretical model was developed to model the piezoelectric polarization charge dependence on the applied gate voltage. As the sheet electron density in the channel increases, the influence of electromechanical coupling reduces as the electric field in the comprising layers reduces. A Monte Carlo device simulator that implements the theoretical model was developed to model the transport in GaN HEMTs.
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- Partial requirement for: Ph.D., Arizona State University, 2013Note typethesis
- Includes bibliographical references (p. 80-83)Note typebibliography
- Field of study: Electrical engineering