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Semiconductor nanowires are featured by their unique one-dimensional structure which makes them promising for small scale electronic and photonic device applications. Among them, III-V material nanowires are particularly outstanding due

Semiconductor nanowires are featured by their unique one-dimensional structure which makes them promising for small scale electronic and photonic device applications. Among them, III-V material nanowires are particularly outstanding due to their good electronic properties. In bulk, these materials reveal electron mobility much higher than conventional silicon based devices, for example at room temperature, InAs field effect transistor (FET) has electron mobility of 40,000 cm2/Vs more than 10 times of Si FET. This makes such materials promising for high speed nanowire FETs.

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    Date Created
    • 2011
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  • Text
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    • Partial requirement for: M.S., Arizona State University, 2011
      Note type
      thesis
    • Includes bibliographical references (p. 31-32)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Hanshuang Liang

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