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Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles

Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies for many electronic parts. Exposure to ionizing radiation increases the density of oxide and interfacial defects in bipolar oxides leading to an increase in base current in bipolar junction transistors.

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    Date Created
    • 2011
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  • Text
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    • Partial requirement for: M.S., Arizona State University, 2011
      Note type
      thesis
    • Includes bibliographical references (p. 72-75)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Michael J. Campola

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