Description

Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and

Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and occasionally incorrect. For example, the carrier densities near the pinch-off point in MOSFETs and JFETs and the minority carrier density in the base near the reverse-biased base-collector junction are frequently assumed to be zero or near zero. Also the channel thickness at the pinch-off point is often shown to approach zero. None of these assumptions can be correct.

Reuse Permissions
  • 3.22 MB application/pdf

    Download count: 0

    Details

    Contributors
    Date Created
    • 2011
    Resource Type
  • Text
  • Collections this item is in
    Note
    • Partial requirement for: M.S., Arizona State University, 2011
      Note type
      thesis
    • Includes bibliographical references (p. 72-73)
      Note type
      bibliography
    • Field of study: Electrical engineering

    Citation and reuse

    Statement of Responsibility

    by Xuan Yang

    Machine-readable links