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The first part describes Metal Semiconductor Field Effect Transistor (MESFET) based fundamental analog building blocks designed and fabricated in a single poly, 3-layer metal digital CMOS technology utilizing fully depletion

The first part describes Metal Semiconductor Field Effect Transistor (MESFET) based fundamental analog building blocks designed and fabricated in a single poly, 3-layer metal digital CMOS technology utilizing fully depletion mode MESFET devices. DC characteristics were measured by varying the power supply from 2.5V to 5.5V. The measured DC transfer curves of amplifiers show good agreement with the simulated ones with extracted models from the same process.

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    Date Created
    • 2011
    Resource Type
  • Text
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    Note
    • Partial requirement for: Ph.D., Arizona State University, 2011
      Note type
      thesis
    • Includes bibliographical references (p. 79-82)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Sung Kim

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