Amorphous oxide semiconductors are promising new materials for various optoelectronic applications. In this study, improved electrical and optical properties upon thermal and microwave processing of mixed-oxide semiconductors are reported. First, arsenic-doped silicon was used as a model system to understand susceptor-assisted microwave annealing. Mixed oxide semiconductor films of indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO) were deposited by room-temperature RF sputtering on flexible polymer substrates.
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- Materials Science
- Microwave Annealing
- Optical and Electrical Characterization
- Oxide Semiconductor/Metal/Oxide Semiconductor Multilayers
- Thermal Processing
- Transparent conductive oxides
- Thin films
- Amorphous semiconductors--Electric properties.
- Amorphous semiconductors
- Amorphous semiconductors--Optical properties.
- Partial requirement for: Ph.D., Arizona State University, 2011Note typethesis
- Includes bibliographical references (p. 93-98)Note typebibliography
- Field of study: Materials science and engineering