Description
Silicon nanowires were grown epitaxially on Si (100) and (111) surfaces using the Vapor-Liquid-Solid (VLS) mechanism under both thermal and plasma enhanced growth conditions. Nanowire morphology was investigated as a function of temperature, time, disilane partial pressure and substrate preparation.
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Contributors
- Joun, Hee-Joung (Author)
- Petuskey, William T. (Thesis advisor)
- Drucker, Jeff (Committee member)
- Chizmeshya, Andrew (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2011
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- Partial requirement for: Ph.D., Arizona State University, 2011Note typethesis
- Includes bibliographical references (p. 144-150)Note typebibliography
- Field of study: Materials science and engineering
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by Hee-Joung Joun