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One of the challenges in future semiconductor device design is excessive rise of power dissipation and device temperatures. With the introduction of new geometrically confined device structures like SOI, FinFET,

One of the challenges in future semiconductor device design is excessive rise of power dissipation and device temperatures. With the introduction of new geometrically confined device structures like SOI, FinFET, nanowires and continuous incorporation of new materials with poor thermal conductivities in the device active region, the device thermal problem is expected to become more challenging in coming years. This work examines the degradation in the ON-current due to self-heating effects in 10 nm channel length silicon nanowire transistors.

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    Date Created
    • 2011
    Resource Type
  • Text
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    • Partial requirement for: Ph.D., Arizona State University, 2011
      Note type
      thesis
    • Includes bibliographical references (p.105-116)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Arif Hossain

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