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To extend the lifetime of complementary metal-oxide-semiconductors (CMOS), emerging process techniques are being proposed to conquer the manufacturing difficulties. New structures and materials are proposed with superior electrical properties to traditional CMOS, such as strain technology and feedback field-effect transistor (FB-FET).

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    Date Created
    2011
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  • Text
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    Note
    • Partial requirement for: Ph.D., Arizona State University, 2011
      Note type
      thesis
    • Includes bibliographical references (p. 92-100)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Chi-Chao Wang

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