Description
Owing to their special characteristics, group III-Nitride semiconductors have attracted special attention for their application in a wide range of optoelectronic devices. Of particular interest are their direct and wide band gaps that span from ultraviolet to the infrared wavelengths.
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Contributors
- Díaz Rivas, Rosa Estela (Author)
- Mahajan, Subhash (Thesis advisor)
- Petuskey, William (Committee member)
- Crozier, Peter (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2010
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Note
- Partial requirement for: Ph.D., Arizona State University, 2010Note typethesis
- Includes bibliographical references (p. 106-115)Note typebibliography
- Field of study: Materials science and engineering
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by Rosa Estela Díaz Rivas