Description
The existing compact models can reproduce the characteristics of MOSFETs in the temperature range of -40oC to 125oC. Some applications require circuits to operate over a wide temperature range consisting of temperatures below the specified range of existing compact models, requiring wide temperature range compact models for the design of such circuits.
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Contributors
- Kathuria, Achal (Author)
- Barnaby, Hugh (Thesis advisor)
- Schroder, Dieter K. (Committee member)
- Vermeire, Bert (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2010
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Note
- Partial requirement for: M.S., Arizona State University, 2010Note typethesis
- Includes bibliographical references (p
- Field of study: Electrical engineering
Citation and reuse
Statement of Responsibility
by Achal Kathuria