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This paper reports the molecular beam epitaxial growth and characterization of high-reflectivity and broad-bandwidth distributed Bragg reflectors (DBRs) made of ZnTe/GaSb quarter-wavelength (lambda/4) layers for optoelectronic applications in the midwave

This paper reports the molecular beam epitaxial growth and characterization of high-reflectivity and broad-bandwidth distributed Bragg reflectors (DBRs) made of ZnTe/GaSb quarter-wavelength (lambda/4) layers for optoelectronic applications in the midwave infrared spectral range (2-5 mu m). A series of ZnTe/GaSb DBRs has been successfully grown on GaSb (001) substrates using molecular beam epitaxy (MBE). During the MBE growth, a temperature ramp was applied to the initial growth of GaSb layers on ZnTe to protect the ZnTe underneath from damage due to thermal evaporation.

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Date Created
  • 2013-10-28
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  • Text
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    Identifier
    • Digital object identifier: 10.1116/1.4793475
    • Identifier Type
      International standard serial number
      Identifier Value
      1365-2966
    • Identifier Type
      International standard serial number
      Identifier Value
      0035-8711
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    Fan, J., Liu, X., Ouyang, L., Pimpinella, R. E., Dobrowolska, M., Furdyna, J. K., . . . Zhang, Y. (2013). Molecular beam epitaxial growth of high-reflectivity and broad-bandwidth ZnTe/GaSb distributed bragg reflectors. Journal of Vacuum Science & Technology B, 31(3), 03C109. doi:10.1116/1.4793475

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