Description

The (110) plane of Co[subscript 3]O[subscript 4] spinel exhibits significantly higher rates of carbon monoxide conversion due to the presence of active Co[superscript 3+] species at the surface. However, experimental

The (110) plane of Co[subscript 3]O[subscript 4] spinel exhibits significantly higher rates of carbon monoxide conversion due to the presence of active Co[superscript 3+] species at the surface. However, experimental studies of Co[subscript 3]O[subscript 4] (110) surfaces and interfaces have been limited by the difficulties in growing high-quality films. We report thin (10–250 Å) Co[subscript 3]O[subscript 4] films grown by molecular beam epitaxy in the polar (110) direction on MgAl[subscript 2]O[subscript 4] substrates.

application/pdf

Download count: 0

Details

Date Created
  • 2014-06-28
Resource Type
  • Text
  • Collections this item is in
    Identifier
    • Digital object identifier: 10.1063/1.4885048
    • Identifier Type
      International standard serial number
      Identifier Value
      0021-8979
    • Identifier Type
      International standard serial number
      Identifier Value
      1089-7550
    Note
    • Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in 115, 24 (2014) and may be found at http://dx.doi.org/10.1063/1.4885048, opens in a new window

    Citation and reuse

    Cite this item

    This is a suggested citation. Consult the appropriate style guide for specific citation guidelines.

    Kormondy, Kristy J., Posadas, Agham B., Slepko, Alexander, Dhamdhere, Ajit, Smith, David J., Mitchell, Khadijih N., Willett-Gies, Travis I., Zollner, Stefan, Marshall, Luke G., Zhou, Jianshi, & Demkov, Alexander A. (2014). Epitaxy of polar semiconductor Co3O4 (110): Growth, structure, and characterization. JOURNAL OF APPLIED PHYSICS, 115(24), 243708. http://dx.doi.org/10.1063/1.4885048

    Machine-readable links