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Photoluminescence spectroscopy has been used to determine the direct gap E [subscript 0] of Ge [subscript 1− y] Sn [subscript y] alloys over a broad compositional range from pure Ge

Photoluminescence spectroscopy has been used to determine the direct gap E [subscript 0] of Ge [subscript 1− y] Sn [subscript y] alloys over a broad compositional range from pure Ge to Sn concentrations exceeding 10%. A fit of the compositional dependence of E [subscript 0] using a standard quadratic expression is not fully satisfactory, revealing that the bowing parameter (quadratic coefficient) b [subscript 0] is compositionally dependent. Excellent agreement with the data is obtained with b [subscript 0](y) = (2.66 ± 0.09) eV − (5.4 ± 1.1)y eV.

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Date Created
  • 2014-10-06
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  • Text
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    Identifier
    • Digital object identifier: 10.1063/1.4897272
    • Identifier Type
      International standard serial number
      Identifier Value
      0003-6951
    • Identifier Type
      International standard serial number
      Identifier Value
      1077-3118
    Note
    • Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in 105, 14 (2014) and may be found at http://dx.doi.org/10.1063/1.4897272, opens in a new window

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    Gallagher, J. D., Senaratne, C. L., Kouvetakis, J., & Menendez, J. (2014). Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1-ySny alloys. APPLIED PHYSICS LETTERS, 105(14), 0-0. http://dx.doi.org/10.1063/1.4897272

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