Description
Photoluminescence spectroscopy has been used to determine the direct gap E0 of Ge1-ySny alloys over a broad compositional range from pure Ge to Sn concentrations exceeding 10%.
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- Gallagher, J. D. (Author)
- Senaratne, Charutha Lasitha (Author)
- Kouvetakis, John (Author)
- Menéndez, Jose (Author)
- College of Liberal Arts and Sciences (Contributor)
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2014-10-06
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Identifier
- Digital object identifier: 10.1063/1.4897272
- Identifier TypeInternational standard serial numberIdentifier Value0003-6951
- Identifier TypeInternational standard serial numberIdentifier Value1077-3118
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- Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in 105, 14 (2014) and may be found at http://dx.doi.org/10.1063/1.4897272, opens in a new window
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Gallagher, J. D., Senaratne, C. L., Kouvetakis, J., & Menendez, J. (2014). Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1-ySny alloys. APPLIED PHYSICS LETTERS, 105(14), 0-0. http://dx.doi.org/10.1063/1.4897272