Description

Chemical vapor deposition-based sulfur passivation using hydrogen sulfide is carried out on both n-type and p-type Si(100) wafers. Al contacts are fabricated on sulfur-passivated Si(100) wafers and the resultant Schottky

Chemical vapor deposition-based sulfur passivation using hydrogen sulfide is carried out on both n-type and p-type Si(100) wafers. Al contacts are fabricated on sulfur-passivated Si(100) wafers and the resultant Schottky barriers are characterized with current–voltage (I–V), capacitance–voltage (C–V) and activation-energy methods. Al/S-passivated n-type Si(100) junctions exhibit ohmic behavior with a barrier height of <0.078 eV by the I–V method and significantly lower than 0.08 eV by the activation-energy method.

application/pdf

Download count: 0

Details

Contributors
Date Created
  • 2014-09-01
Resource Type
  • Text
  • Collections this item is in
    Identifier
    • Digital object identifier: 10.1007/s00339-014-8390-7
    • Identifier Type
      International standard serial number
      Identifier Value
      0947-8396
    • Identifier Type
      International standard serial number
      Identifier Value
      1432-0630
    Note

    Citation and reuse

    Cite this item

    This is a suggested citation. Consult the appropriate style guide for specific citation guidelines.

    Zhang, Hai-feng, Saha, Arunodoy, Sun, Wen-cheng, & Tao, Meng (2014). Characterization of Al/Si junctions on Si(100) wafers with chemical vapor deposition-based sulfur passivation. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 116(4), 2031-2038. http://dx.doi.org/10.1007/s00339-014-8390-7

    Machine-readable links