The compositional dependence of the lowest direct and indirect band gaps in Ge1-ySny alloys has been determined from room-temperature photoluminescence measurements. This technique is particularly attractive for a comparison of the two transitions because distinct features in the spectra can be associated with the direct and indirect gaps.
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- Jiang, L. (Author)
- Gallagher, J. D. (Author)
- Senaratne, Charutha Lasitha (Author)
- Aoki, Toshihiro (Author)
- Mathews, J. (Author)
- Kouvetakis, John (Author)
- Menéndez, Jose (Author)
- College of Liberal Arts and Sciences (Contributor)
- Digital object identifier: 10.1088/0268-1242/29/11/115028
- Identifier TypeInternational standard serial numberIdentifier Value0268-1242
- Identifier TypeInternational standard serial numberIdentifier Value1361-6641
- Copyright IOP Publishing. This is the authors' final, peer-reviewed manuscript. The final version as published can be viewed online at http://dx.doi.org/10.1088/0268-1242/29/11/115028, opens in a new window
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Jiang, L., Gallagher, J. D., Senaratne, C. L., Aoki, T., Mathews, J., Kouvetakis, J., & Menendez, J. (2014). Compositional dependence of the direct and indirect band gaps in Ge1-ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 29(11), 115028. http://dx.doi.org/10.1088/0268-1242/29/11/115028