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The compositional dependence of the lowest direct and indirect band gaps in Ge[subscript 1−y]Sn[subscript y] alloys has been determined from room-temperature photoluminescence measurements. This technique is particularly attractive for a

The compositional dependence of the lowest direct and indirect band gaps in Ge[subscript 1−y]Sn[subscript y] alloys has been determined from room-temperature photoluminescence measurements. This technique is particularly attractive for a comparison of the two transitions because distinct features in the spectra can be associated with the direct and indirect gaps.

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Date Created
  • 2014-11-01
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  • Text
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    Identifier
    • Digital object identifier: 10.1088/0268-1242/29/11/115028
    • Identifier Type
      International standard serial number
      Identifier Value
      0268-1242
    • Identifier Type
      International standard serial number
      Identifier Value
      1361-6641
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    Jiang, L., Gallagher, J. D., Senaratne, C. L., Aoki, T., Mathews, J., Kouvetakis, J., & Menendez, J. (2014). Compositional dependence of the direct and indirect band gaps in Ge1-ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 29(11), 115028. http://dx.doi.org/10.1088/0268-1242/29/11/115028

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