Description
The emission properties of GeSn heterostructure pin diodes have been investigated. The devices contain thick (400–600 nm) Ge1-y Sny i-layers spanning a broad compositional range below and above the crossover Sn concentration yc where the Ge1-y Sny alloy becomes a direct-gap material.
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- Gallagher, J. D. (Author)
- Senaratne, Charutha Lasitha (Author)
- Sims, Patrick (Author)
- Aoki, Toshihiro (Author)
- Menéndez, Jose (Author)
- Kouvetakis, John (Author)
- College of Liberal Arts and Sciences (Contributor)
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2015-03-02
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Identifier
- Digital object identifier: 10.1063/1.4913688
- Identifier TypeInternational standard serial numberIdentifier Value0003-6951
- Identifier TypeInternational standard serial numberIdentifier Value1077-3118
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- Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in APPLIED PHYSICS LETTERS 106, 091103 (2015) and may be found at http://dx.doi.org/10.1063/1.4913688, opens in a new window
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Gallagher, J. D., Senaratne, C. L., Sims, P., Aoki, T., Menendez, J., & Kouvetakis, J. (2015). Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition. APPLIED PHYSICS LETTERS, 106, 091103. http://dx.doi.org/10.1063/1.4913688