Description

We studied the optical properties of InAs/GaAs[subscript 0.83]Sb[subscript 0.17] quantum dots (QDs), with varying silicon delta-doping position (spatial distance, d = 0.5, 1, and 2 nm), using photoluminescence (PL) measurements.

We studied the optical properties of InAs/GaAs[subscript 0.83]Sb[subscript 0.17] quantum dots (QDs), with varying silicon delta-doping position (spatial distance, d = 0.5, 1, and 2 nm), using photoluminescence (PL) measurements. Compared with the undoped QDs, the PL peak energies of the ground state (GS) emissions for the doped QDs with d = 0.5 and 2 nm were found to be greatly blueshifted by ~31 meV, which was much larger than that for the doped QDs with d = 1 nm.

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Date Created
  • 2015-03-01
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  • Text
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    Identifier
    • Digital object identifier: 10.1088/0268-1242/30/3/035006
    • Identifier Type
      International standard serial number
      Identifier Value
      0268-1242
    • Identifier Type
      International standard serial number
      Identifier Value
      1361-6641
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    Kim, Yeongho, Ban, Keun-Yong, Kuciauskas, Darius, Dippo, Patricia C., & Honsberg, Christiana B. (2015). Impact of delta-doping position on photoluminescence in type-II InAs/GaAsSb quantum dots. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30(3), 0-0. http://dx.doi.org/10.1088/0268-1242/30/3/035006

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