A film-coupled metamaterial structure is numerically investigated for enhancing the light absorption in an ultrathin photovoltaic layer of crystalline gallium arsenide (GaAs). The top subwavelength concave grating and the bottom metallic film could not only effectively trap light with the help of wave interference and magnetic resonance effects excited above the bandgap, but also practically serve as electrical contacts for photon-generated charge collection.
Download count: 0
Details
- Wang, Hao (Contributor)
- Wang, Liping (Contributor)
- Ira A. Fulton Schools of Engineering (Contributor)
- 2015-02-01
- Digital object identifier: 10.1063/1.4907878
- Identifier TypeInternational standard serial numberIdentifier Value2158-3226
- Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in AIP ADVANCES 5, 2 (2015) and may be found at http://dx.doi.org/10.1063/1.4907878, opens in a new window
Citation and reuse
Cite this item
This is a suggested citation. Consult the appropriate style guide for specific citation guidelines.
Wang, Hao, & Wang, Liping (2015). Plasmonic light trapping in an ultrathin photovoltaic layer with film-coupled metamaterial structures. AIP ADVANCES, 5(2). http://dx.doi.org/10.1063/1.4907878