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The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO3 (SHO) is grown directly on Ge by atomic layer deposition

The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy.

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Date Created
  • 2015-02-07
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    Identifier
    • Digital object identifier: 10.1063/1.4906953
    • Identifier Type
      International standard serial number
      Identifier Value
      0272-4944
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    • Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in JOURNAL OF APPLIED PHYSICS 117, 5 (2015) and may be found at http://dx.doi.org/10.1063/1.4906953, opens in a new window

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    McDaniel, Martin D., Hu, Chengqing, Lu, Sirong, Ngo, Thong Q., Posadas, Agham, Jiang, Aiting, Smith, David J., Yu, Edward T., Demkov, Alexander A., & Ekerdt, John G. (2015). Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications. JOURNAL OF APPLIED PHYSICS, 117, 054101. http://dx.doi.org/10.1063/1.4906953

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