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InGaN semiconductors are promising candidates for high-efficiency next-generation thin film solar cells. In this work, we study the photovoltaic performance of single-junction and two-junction InGaN solar cells using a semi-analytical

InGaN semiconductors are promising candidates for high-efficiency next-generation thin film solar cells. In this work, we study the photovoltaic performance of single-junction and two-junction InGaN solar cells using a semi-analytical model. We analyze the major loss mechanisms in InGaN solar cell including transmission loss, thermalization loss, spatial relaxation loss, and recombination loss. We find that transmission loss plays a major role for InGaN solar cells due to the large bandgaps of III-nitride materials.

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Date Created
  • 2016-06-01
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  • Text
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    Identifier
    • Digital object identifier: 10.1063/1.4953006
    • Identifier Type
      International standard serial number
      Identifier Value
      0021-8979
    • Identifier Type
      International standard serial number
      Identifier Value
      1089-7550
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    Huang, X., Fu, H., Chen, H., Lu, Z., Ding, D., & Zhao, Y. (2016). Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model. Journal of Applied Physics, 119(21), 213101. doi:10.1063/1.4953006

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