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We study the low efficiency droop characteristics of semipolar InGaN light-emitting diodes (LEDs) using modified rate equation incoporating the phase-space filling (PSF) effect where the results on c-plane LEDs are

We study the low efficiency droop characteristics of semipolar InGaN light-emitting diodes (LEDs) using modified rate equation incoporating the phase-space filling (PSF) effect where the results on c-plane LEDs are also obtained and compared. Internal quantum efficiency (IQE) of LEDs was simulated using a modified ABC model with different PSF filling (n[subscript 0]), Shockley-Read-Hall (A), radiative (B), Auger (C) coefficients and different active layer thickness (d), where the PSF effect showed a strong impact on the simulated LED efficiency results.

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    Date Created
    • 2016-06-15
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  • Text
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    Identifier
    • Digital object identifier: 10.1063/1.4954296
    • Identifier Type
      International standard serial number
      Identifier Value
      2158-3226
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    Fu, H., Lu, Z., & Zhao, Y. (2016). Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect. AIP Advances, 6(6), 065013. doi:10.1063/1.4954296

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