Description

The optical properties of intersubband transition in a semipolar AlGaN/GaN single quantum well (SQW) are theoretically studied, and the results are compared with polar c-plane and nonpolar m-plane structures. The

The optical properties of intersubband transition in a semipolar AlGaN/GaN single quantum well (SQW) are theoretically studied, and the results are compared with polar c-plane and nonpolar m-plane structures. The intersubband transition frequency, dipole matrix elements, and absorption spectra are calculated for SQW on different semipolar planes.

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Date Created
  • 2016-05-05
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  • Text
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    Identifier
    • Digital object identifier: 10.1063/1.4948667
    • Identifier Type
      International standard serial number
      Identifier Value
      0021-8979
    • Identifier Type
      International standard serial number
      Identifier Value
      1089-7550
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    Fu, H., Lu, Z., Huang, X., Chen, H., & Zhao, Y. (2016). Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications. Journal of Applied Physics, 119(17), 174502. doi:10.1063/1.4948667

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