Description

The optical properties of bulk InAs[subscript 0.936]Bi[subscript 0.064] grown by molecular beam epitaxy on a (100)-oriented GaSb substrate are measured using spectroscopic ellipsometry. The index of refraction and absorption coefficient

The optical properties of bulk InAs[subscript 0.936]Bi[subscript 0.064] grown by molecular beam epitaxy on a (100)-oriented GaSb substrate are measured using spectroscopic ellipsometry. The index of refraction and absorption coefficient are measured over photon energies ranging from 44 meV to 4.4 eV and are used to identify the room temperature bandgap energy of bulk InAs[subscript 0.936]Bi[subscript 0.064] as 60.6 meV.

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Date Created
  • 2016-06-08
Resource Type
  • Text
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    Identifier
    • Digital object identifier: 10.1063/1.4953027
    • Identifier Type
      International standard serial number
      Identifier Value
      0021-8979
    • Identifier Type
      International standard serial number
      Identifier Value
      1089-7550
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    Webster, P. T., Shalindar, A. J., Riordan, N. A., Gogineni, C., Liang, H., Sharma, A. R., & Johnson, S. R. (2016). Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices. Journal of Applied Physics, 119(22), 225701. doi:10.1063/1.4953027

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